2SC3673_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Applications Solenoid Drive Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3673
Switching Applications
Solenoid Drive Applications
2SC3673
Unit: mm
• High DC current gain: hFE = 500 (min) (IC = 400 mA)
• Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 300 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
40
V
40
V
7
V
2
A
0.5
A
1000
mW
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB = 40 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 1 V, I_C = 400 mA
I_C = 300 mA, I_B = 1 mA
I_C = 300 mA, I_B = 1 mA
V_CE = 2 V, I_C = 100 mA
V_CB = 10 V, I_B = 0, f = 1 MHz
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Min Typ. Max Unit
―
―
10
µA
―
―
1
µA
40
―
―
V
500 ―
―
―
0.3 0.5
V
―
―
1.1
V
― 220 ― MHz
―
20
―
pF
Turn-on time
Switching time Storage time
Fall time
t_on
―
1.0
―
20 µs
Input ^IB1
Output
t_stg
I_B2
―
3.0
―
µs
V_CC = 30 V
t_f
I_B1 = −I_B2 = 1 mA, duty cycle ≤ 1%
―
1.2
―
1
2004-07-26