2SC3671_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Strobe Flash Applications Medium Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3671
Strobe Flash Applications
Medium Power Amplifier Applications
2SC3671
Unit: mm
• High DC current gain and excellent hFE linearity
: hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A)
: hFE = 70 (min) (VCE = 2 V, IC = 4 A)
• Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
• High collector power dissipation
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulse
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
50
V
40
V
20
8
V
5
A
8
0.5
A
1000
mW
150
°C
−55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 40 V, I_E = 0
I_EBO
V_EB = 8 V, I_C = 0
V_CEO
I_C = 10 mA, I_B = 0
V_EBO
I_E = 1 mA, I_C = 0
h_{FE (1)}
V_CE = 2 V, I_C = 0.5 A
(Note 2)
h_{FE (2)}
V_{CE (sat)}
V_BE
V_CE = 2 V, I_C = 4 A
I_C = 4 A, I_B = 0.1 A
V_CE = 2 V, I_C = 4 A
f_T
V_CE = 2 V, I_C = 0.5 A
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note 2: h_{FE (1)} classification A: 140 to 240, B: 200 to 330, C: 300 to 450
1
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
20
―
―
V
8
―
―
V
140 ― 450
70
―
―
―
―
1.0
V
―
―
1.5
V
― 100 ― MHz
―
40
―
pF
2004-07-07