2SC3670_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Strobe Flash Applications Medium Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3670
Strobe Flash Applications
Medium Power Amplifier Applications
2SC3670
Unit: mm
• High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
30
V
30
V
10
6
V
2
A
5
0.5
A
1000
mW
150
°C
−55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 30 V, I_E = 0
I_EBO
V_EB = 6 V, I_C = 0
V_CEO
I_C = 10 mA, I_B = 0
V_EBO
I_C = 1 mA, I_C = 0
h_{FE (1)}
V_CE = 1 V, I_C = 0.5 A
(Note 2)
h_{FE (2)}
V_{CE (sat)}
V_BE
V_CE = 1 V, I_C = 2 A
I_C = 2 A, I_B = 50 mA
V_CE = 1 V, I_C = 2 A
f_T
V_CE = 1 V, I_C = 0.5 A
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
―
― 100 nA
―
― 100 nA
10
―
―
V
6
―
―
V
140 ― 600
70 200 ―
―
0.2 0.5
V
― 0.86 1.5
V
― 150 ― MHz
―
27
―
pF
Note 2: h_{FE (1)} classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600
1
2004-07-07