2SC3669_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications
Power Switching Applications
2SC3669
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SA1429
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
80
V
80
V
5
V
2
A
1
A
1000
mW
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
V_CB = 80 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V _{(BR) CEO} I_C = 10 mA, I_B = 0
h_{FE (1)}
V_CE = 2 V, I_C = 0.5 A
(Note)
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CE = 2 V, I_C = 1.5 A
I_C = 1 A, I_B = 0.05 A
I_C = 1 A, I_B = 0.05 A
V_CE = 2 V, I_C = 0.5 A
V_CB = 10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
―
1.0
µA
―
―
1.0
µA
80
―
―
V
70
― 240
40
―
―
― 0.15 0.5
V
―
0.9 1.2
V
― 100 ― MHz
―
30
―
pF
Turn-on time
t_on
20 µs
Input ^IB1
Output
―
0.2
―
Switching time Storage time
Fall time
t_stg
I_B2
V_CC = 30 V
t_f
I_B1 = −I_B2 = 0.05 A, duty cycle ≤ 1%
Note: h_{FE (1)} classification O: 70 to 140, Y: 120 to 240
1
―
1.0
―
µs
―
0.2
―
2004-07-07