2SC3666_04 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3666
Audio Power Amplifier Applications
2SC3666
Unit: mm
• High DC current gain: hFE (1) = 100 to 320
• High power dissipation: PC = 1000 mW
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
30
V
30
V
5
V
1
A
0.1
A
1000
mW
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 30 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V _{(BR) CEO} I_C = 10 mA, I_B = 0
h_{FE (1)}
V_CE = 2 V, I_C = 100 mA
(Note)
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CE = 2 V, I_C = 800 mA
I_C = 800 mA, I_B = 80 mA
V_CE = 2 V, I_C = 800 mA
V_CE = 2 V, I_C = 100 mA
V_CB = 10 V, f = 1 MHz
Note: h_{FE (1)} classification O: 100 to 200, Y: 160 to 320
Marking
C3666
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
30
―
―
V
100 ― 320
40
―
―
―
―
0.5
V
―
0.9 1.5
V
― 150 ― MHz
―
13
―
pF
2004-07-07