2SC3665_04 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Power Amplifier Applications Driver-Stage Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3665
Audio Power Amplifier Applications
Driver-Stage Amplifier Applications
2SC3665
Unit: mm
• Complementary to 2SA1425.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
120
V
120
V
5
V
800
mA
80
mA
1000
mW
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
V _{(BR) CEO}
V_CB = 120 V, I_E = 0
V_EB = 5 V, I_C = 0
I_C = 10 mA, I_B = 0
V _{(BR) EBO} I_E = 1 mA, I_C = 0
h_FE
V_CE = 5 V, I_C = 100 mA
(Note)
V_{CE (sat)} I_C = 500 mA, I_B = 50 mA
V_BE
V_CE = 5 V, I_C = 500 mA
f_T
V_CE = 5 V, I_C = 100 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_FE classification O: 80 to 160, Y: 120 to 240
Marking
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
120 ―
―
V
5
―
―
V
80
― 240
―
―
1.0
V
―
―
1.0
V
― 120 ― MHz
―
―
30
pF
C3665
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-07