2SC3515_04 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

2SC3515
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3515
HIGH Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Unit: mm
• High voltage: VCBO = 300 V, VCEO = 300 V
• Low saturation voltage: VCE (sat) = 0.5 V (max)
• Small collector output capacitance: Cob = 3 pF (typ.)
• Complementary to 2SA1384
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
V_CBO
300
V
V_CEO
300
V
V_EBO
6
V
I_C
100
mA
I_B
20
mA
P_C
500
P_C
mW
1000
(Note 1)
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm² × 0.8 mmt)
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1
2004-07-07