2SC3474_05 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Applications Solenoid Drive Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3474
2SC3474
Switching Applications
Solenoid Drive Applications
Industrial Applications
Unit: mm
• High DC current gain: hFE = 500 (min) (IC = 400 mA)
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
80
V
80
V
7
V
2
A
0.5
A
1.0
W
20
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2005-02-01