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2SC3437_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications | |||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3437
Ultra High Speed Switching Applications
Computer, Counter Applications
2SC3437
Unit: mm
⢠High transition frequency: fT = 400 MHz (typ.)
⢠Low saturation voltage: VCE (sat) = 0.3 V (max)
⢠High speed switching time: tstg = 15 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
200
mA
Base current
IB
40
mA
Collector power dissipation
PC
150
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
â55~125
°C
JEDEC
TO-236MOD
JEITA
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01
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