2SC3422_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3422
Audio Frequency Power Amplifier
Low-Speed Switching
2SC3422
Unit: mm
• Suitable for the output stage of 5-watt car radios and car stereos.
• Good h_FE linearity
• Complementary to 2SA1359.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
40
V
40
V
5
V
3
A
1
A
1.5
W
10
150
°C
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-8H1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.82 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09