2SC3420_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3420
Strobe Flash Applications
Audio Power Amplifier Applications
2SC3420
Unit: mm
• High DC current gain : h_FE = 140 to 600 (V_CE = 2 V, I_C = 0.5 A)
: h_FE = 70 (min) (V_CE = 2 V, I_C = 4 A)
• Low saturation voltage: V_{CE (sat)} = 1.0 V (max) (I_C = 4 A, I_B = 0.1 A)
• High collector power dissipation: P_C = 10 W (Tc = 25°C),
P_C = 1.5 W (Ta = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulse
(Note 1)
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
50
V
40
V
20
8
V
5
A
8
1
A
1.5
W
10
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09