2SC3419_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Medium-Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3419
Medium-Power Amplifier Applications.
2SC3419
Unit: mm
• Low saturation voltage: VCE (sat) = 0.25 V (typ.)
(IC = 500 mA, IB = 50 mA)
• High collector power dissipation: PC = 1.2 W (Ta = 25°C)
• Complementary to 2SA1356
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
40
V
40
V
5
V
800
mA
80
mA
1.2
W
5
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
V_CB = 40 V, I_E = 0
V_EB = 5 V, I_C = 0
V_CEO
I_C = 10 mA, I_B = 0
h_{FE (1)}
V_CE = 2 V, I_C = 50 mA
(Note)
h_{FE (2)} V_CE = 2 V, I_C = 0.8 A
V_{CE (sat)}
V_BE
f_T
I_C = 500 mA, I_B = 50 mA
V_CE = 2 V, I_C = 500 mA
V_CE = 2 V, I_C = 0.5 A
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O: 70 to 140, Y: 120 to 240
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Min Typ. Max Unit
―
―
1.0
µA
―
―
1.0
µA
40
―
―
V
70
― 240
13
60
―
― 0.25 0.8
V
― 0.90 1.1
V
50 100 ― MHz
―
10
―
pF
1
2004-07-07