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| 2SC3325_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications | |||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3325
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
2SC3325
Unit: mm
⢠Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
⢠High voltage: VCEO = 50 V (min)
⢠Complementary to 2SA1313
⢠Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
Collector power dissipation
Junction temperature
Storage temperature range
IB
50
mA
PC
200
mW
Tj
150
°C
Tstg
â55~150
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.012 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01
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