2SC3307_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications

2SC3307
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3307
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
High-Speed DC-DC Converter Applications
Industrial Applications
Unit: mm
• Excellent switching times: t_r = 1.0 μs (max), t_f = 1.0 μs (max)
(I_C = 5 A)
• High collector breakdown voltage: V_CEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
900
V
800
V
7
V
10
A
15
3
A
150
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09