2SC3303_05 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Current Switching Applications DC-DC Converter Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3303
2SC3303
High Current Switching Applications
DC-DC Converter Applications
Industrial Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
• High speed switching time: tstg = 1.0 µs (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
100
V
80
V
7
V
5
A
8
1
A
1.0
W
20
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2005-02-01