2SC3303Y Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Current Switching Applications

2SC3303
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3303
High Current Switching Applications
DC-DC Converter Applications
Industrial Applications
Unit: mm
• Low collector saturation voltage: V_{CE (sat)} = 0.4 V (max) (I_C = 3 A)
• High speed switching time: t_stg = 1.0 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
100
V
Collector-emitter voltage
V_CEO
80
V
Emitter-base voltage
V_EBO
7
V
DC
Collector current
I_C
5
A
Pulse
I_CP
8
Base current
I_B
1
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1.0
W
20
Junction temperature
T_j
150
°C
JEDEC
―
Storage temperature range
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7J1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-02-05