2SC3266_03 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3266
Power Amplifier Applications
Power Switching Applications
2SC3266
Unit: mm
· Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A)
· Complementary to 2SA1296
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
20
V
20
V
6
V
2
A
0.5
A
750
mW
150
°C
-55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 20 V, I_E = 0
I_EBO
V_EB = 6 V, I_C = 0
V _{(BR) CEO} I_C = 10 mA, I_B = 0
V _{(BR) EBO} I_E = 0.1 mA, I_C = 0
h_{FE (1)}
V_CE = 2 V, I_C = 0.1 A
(Note)
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CE = 2 V, I_C = 2 A
I_C = 2 A, I_B = 0.1 A
V_CE = 2 V, I_C = 0.1 A
V_CE = 2 V, I_C = 0.5 A
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification Y: 120~240, GR: 200~400, BL: 350~700
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
20
¾
¾
V
6
¾
¾
V
120 ¾ 700
75
¾
¾
¾
¾
0.5
V
¾
¾ 0.85
V
¾ 120 ¾ MHz
¾
30
¾
pF
1
2003-03-25