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2SC3265YTE85L Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Low Frequency Power Amplifier Applications Power Switching Applications | |||
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2SC3265
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3265
Low Frequency Power Amplifier Applications
Power Switching Applications
⢠High DC current gain: hFE (1) = 100~320
⢠Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA)
⢠Complementary to 2SA1298
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
30
V
25
V
5
V
800
mA
160
mA
200
mW
150
°C
â55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
TO-236MOD
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3F1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.012 g (typ.)
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CEO
VCB = 30 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
V (BR) EBO IE = 0.1 mA, IC = 0
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
hFE (2)
VCE (sat)
VBE
VCE = 1 V, IC = 800 mA
IC = 500 mA, IB = 20 mA
VCE = 1 V, IC = 10 mA
fT
VCE = 5 V, IC = 10 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
Min Typ. Max Unit
â¯
â¯
0.1
μA
â¯
â¯
0.1
μA
25
â¯
â¯
V
5
â¯
â¯
V
100
â¯
320
40
â¯
â¯
â¯
â¯
0.4
V
0.5
â¯
0.8
V
⯠120 ⯠MHz
â¯
13
â¯
pF
1
2007-11-01
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