2SC3265Y Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Low Frequency Power Amplifier Applications Power Switching Applications

2SC3265
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3265
Low Frequency Power Amplifier Applications
Power Switching Applications
• High DC current gain: h_{FE (1)} = 100~320
• Low saturation voltage: V_{CE (sat)} = 0.4 V (max)
(I_C = 500 mA, I_B = 20 mA)
• Complementary to 2SA1298
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
30
V
25
V
5
V
800
mA
160
mA
200
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
TO-236MOD
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3F1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.012 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
V _{(BR) CEO}
V_CB = 30 V, I_E = 0
V_EB = 5 V, I_C = 0
I_C = 10 mA, I_B = 0
V _{(BR) EBO} I_E = 0.1 mA, I_C = 0
h_{FE (1)}
(Note)
V_CE = 1 V, I_C = 100 mA
h_{FE (2)}
V_{CE (sat)}
V_BE
V_CE = 1 V, I_C = 800 mA
I_C = 500 mA, I_B = 20 mA
V_CE = 1 V, I_C = 10 mA
f_T
V_CE = 5 V, I_C = 10 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O: 100~200, Y: 160~320
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
25
⎯
⎯
V
5
⎯
⎯
V
100
⎯
320
40
⎯
⎯
⎯
⎯
0.4
V
0.5
⎯
0.8
V
⎯ 120 ⎯ MHz
⎯
13
⎯
pF
1
2007-11-01