2SC3138_03 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Voltage Switching Applications

2SC3138
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3138
High Voltage Switching Applications
· High voltage: VCBO = 200 V (max)
VCEO = 200 V (max)
· Small flat package
· Complementary to 2SA1255
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Marking
Rating
Unit
200
V
200
V
5
V
50
mA
20
mA
150
mW
125
°C
-55~125
°C
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
1
2003-03-27