2SC3123_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type TV VHF Mixer Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3123
2SC3123
TV VHF Mixer Applications
Unit: mm
• High conversion gain: G_ce = 23dB (typ.)
• Low reverse transfer capacitance: C_re = 0.4 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
30
V
Collector-emitter voltage
V_CEO
20
V
Emitter-base voltage
V_EBO
3
V
Collector current
I_C
50
mA
Base current
I_B
25
mA
Collector power dissipation
P_C
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
JEITA
―
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse transfer capacitance
Transition frequency
Conversion gain
Noise figure
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE
C_re
f_T
G_ce
NF
V_CB = 25 V, I_E = 0
V_EB = 3 V, I_C = 0
I_C = 1 mA, I_B = 0
V_CE = 10 V, I_C = 5 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CE = 10 V, I_C = 5 mA
V_CC = 12 V, f = 200 MHz
f_L = 260 MHz
Min Typ. Max Unit
⎯
⎯
100
nA
⎯
⎯ 1000 nA
20
⎯
⎯
V
40 150 300
⎯
0.4
0.5
pF
900 1400 ⎯ MHz
20
23
⎯
dB
⎯
3.8
5.5
dB
1
2007-11-01