2SC3121_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3121
TV Tuner, UHF Oscillator Applications (common base)
TV Tuner, UHF Converter Applications (common base)
2SC3121
Unit: mm
• High transition frequency: f_T = 1500 MHz (typ.)
• Excellent linearity
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
30
V
Collector-emitter voltage
V_CEO
15
V
Emitter-base voltage
V_EBO
3
V
Collector current
I_C
25
mA
Base current
I_B
50
mA
Collector power dissipation
P_C
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Transition frequency
Collector output capacitance
Collector-base time constant
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE
f_T
C_ob
C_c･rbb’
V_CB = 15 V, I_E = 0
V_EB = 3 V, I_C = 0
I_C = 1 mA, I_B = 0
V_CE = 3 V, I_C = 8 mA
V_CE = 10 V, I_C = 8 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CB = 10 V, I_C = 8 mA, f = 30 MHz
Marking
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
1.0
μA
15
⎯
⎯
V
60 150 320
1100 1500 ⎯ MHz
⎯
0.9
1.3
pF
⎯
7
12
ps
1
2007-11-01