2SC3120_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type TV Tuner, UHF Mixer Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3120
TV Tuner, UHF Mixer Applications
VHF~UHF Band RF Amplifier Applications
2SC3120
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
30
V
15
V
3
V
50
mA
25
mA
150
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse transfer capacitance
Transition frequency
Conversion gain
Noise figure
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE
C_re
f_T
G_ce
NF
V_CB = 30 V, I_E = 0
V_EB = 2 V, I_C = 0
I_C = 1 mA, I_B = 0
V_CE = 10 V, I_C = 5 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CE = 10 V, I_C = 2 mA
V_CC = 10 V, I_C = 2 mA, f = 800 MHz,
f_L = 830 MHz (0dBm) (Figure 1)
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
1.0
μA
15
⎯
⎯
V
40 100 200
⎯
0.6
0.9
pF
1500 2400 ⎯ MHz
12
17
⎯
dB
⎯
8
⎯
dB
1
2007-11-01