2SC3113_03 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – For Audio Amplifier and Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3113
2SC3113
For Audio Amplifier and Switching Applications
Unit: mm
· High DC current gain: hFE = 600~3600
· High breakdown voltage: VCEO = 50 V
· High collector current: IC = 150 mA (max)
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
50
V
50
V
5
V
150
mA
30
mA
200
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
I_CBO
I_EBO
V_CB = 50 V, I_E = 0
V_EB = 5 V, I_C = 0
h_FE
(Note)
V_CE = 6 V, I_C = 2 mA
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
f_T
V_CE = 10 V, I_C = 10 mA
C_ob
NF (1)
NF (2)
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CE = 6 V, I_C = 0.1 mA, f = 100 Hz,
R_G = 10 kW
V_CE = 6 V, I_C = 0.1 mA, f = 1 kHz,
R_G = 10 kW
Note: h_FE classification A: 600~1800, B: 1200~3600
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
600
¾ 3600
¾ 0.12 0.25
V
100 250
¾
MHz
¾
3.5
¾
pF
¾
0.5
¾
dB
¾
0.3
¾
1
2003-03-25