2SC3112_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
• High DC current gain_: h_FE = 600~3600
• High breakdown voltage: V_CEO = 50 V
• High collector current: I_C = 150 mA (max)
2SC3112
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
150
mA
Base current
I_B
30
mA
Collector power dissipation
P_C
400
mW
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
JEDEC
TO-92
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-43
temperature/current/voltage and the significant change in
TOSHIBA
2-5F1B
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.21 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
I_CBO
V_CB = 50 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_FE
V_CE = 6 V, I_C = 2 mA
(Note)
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
f_T
V_CE = 10 V, I_C = 10 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
NF (1)
V_CE = 6 V, I_C = 0.1 mA, f = 100 Hz,
R_G = 10 kΩ
NF (2)
V_CE = 6 V, I_C = 0.1 mA, f = 1 kHz,
R_G = 10 kΩ
Note: h_FE classification A: 600~1800, B: 1200~3600
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
600 ⎯ 3600
⎯
0.12 0.25
V
100 250 ⎯ MHz
⎯
3.5
⎯
pF
⎯
0.5
⎯
dB
⎯
0.3
⎯
1
2007-11-01