2SC3076_05 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications
Power Switching Applications
2SC3076
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• Excellent switching time: tstg = 1.0 µs (typ.)
• Complementary to 2SA1241
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
50
V
50
V
5
V
2
A
1
A
1.0
W
10
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2005-02-01