2SC3074_05 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Current Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
• High speed switching time: tstg = 1.0 µs (typ)
• Complementary to 2SA1244
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
60
V
50
V
5
V
5
A
1
A
1.0
W
20
150
°C
−55 to 150
°C
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2005-02-01