2SC2983_05 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications Driver Stage Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2983
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC2983
Unit: mm
• High transition frequency: fT = 100 MHz (typ.)
• Complementary to 2SA1225
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
160
V
160
V
5
V
1.5
A
0.3
A
1.0
W
15
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2005-02-01