2SC2982_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Storobo Flash Applications Medium Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications
Medium Power Amplifier Applications
2SC2982
Unit: mm
• High DC current gain and excellent linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)
• Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SA1314
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
30
V
Collector-emitter voltage
V_CES
30
V
V_CEO
10
Emitter-base voltage
V_EBO
6
V
DC
I_C
Collector current
Pulse (Note 1)
I_CP
2
A
4
Base current
DC
I_B
Pulse (Note 1)
I_BP
0.4
A
0.8
P_C
500
Collector power dissipation
P_C
mW
1000
(Note 2)
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: 2SC2982 mounted on a ceramic substrate (250 mm² × 0.8 t)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1
2004-07-07