2SC2881_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Voltage Amplifier Applications Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2881
Voltage Amplifier Applications
Power Amplifier Applications
2SC2881
Unit: mm
• High voltage: VCEO = 120 V
• High transition frequency: fT = 120 MHz (typ.)
• Small flat package
• PC = 1.0 to 2.0 W (mounted on ceramic substrate)
• Complementary to 2SA1201
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
V_CBO
120
V
V_CEO
120
V
V_EBO
5
V
I_C
800
mA
I_B
160
mA
P_C
500
P_C
mW
1000
(Note 1)
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm² × 0.8 t)
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1
2004-07-07