2SC2879A Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)

2SC2879A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2879A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
z Specified 12.5V, 28MHz Characteristics
z Output Power
: Po = 100W_PEP
z Power Gain
: Gp = 13dB
z Collector Efficiency
: η_C = 35% (Min.)
z Intermodulation Distortion: IMD = −24dB(Max.)
(MIL Standard)
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V_CBO
45
V
Collector-Emitter Voltage
V_CES
45
V
Collector-Emitter Voltage
V_CEO
18
V
Emitter-Base Voltage
V_EBO
4
V
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
I_C
25
A
P_C
250
W
JEDEC
—
T_j
175
°C
EIAJ
—
TOSHIBA
2–13B1A
T_stg
−65~175
°C
Weight: 5.2g
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
MARKING
TOSHIBA
2SC2879
JAPAN
Dot
Lot No.
1
2007-11-01