2SC2873_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2873
Power Amplifier Applications
Power Switching Applications
2SC2873
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High-speed switching time: tstg = 1.0 µs (typ.)
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SA1213
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
V_CBO
50
V
V_CEO
50
V
V_EBO
5
V
I_C
2
A
I_B
0.4
A
P_C
500
P_C
mW
1000
(Note 1)
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm² × 0.8 t)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1
2004-07-07