2SC2782A Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – VHF BAND POWER AMPLIFIER APPLICATIONS

2SC2782A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2782A
VHF BAND POWER AMPLIFIER APPLICATIONS
z Output Power
: Po = 80W (Min.)
(f = 175MHz, V_CC = 12.5V, Pi = 18W)
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
36
V
16
V
4
V
20
A
220
W
175
°C
−65~175
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
JEDEC
EIAJ
TOSHIBA
Weight: 5.5g
—
—
2−13C1A
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
MARKING
TOSHIBA
2SC2782
JAPAN
Dot
Lot No.
1
2007-11-01