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2SC2716_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process) | |||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2716
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
AM Frequency Converter Applications
2SC2716
Unit: mm
⢠Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
100
mA
Emitter current
IE
â100
mA
Collector power dissipation
PC
150
wW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
â55~125
°C
JEDEC
JEITA
â
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1A
temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Reverse transfer capacitance
Collector-base time constant
Noise figure
ICBO
IEBO
VCB = 20 V, IE = 0
VEB = 2 V, IC = 0
hFE
VCE = 12 V, IC = 2 mA
(Note)
VCE (sat)
VBE (sat)
fT
Cre
Ccï½¥rbbâ
NF
IC = 10 mA, IB = 1 mA
IC = 10 mA, IB = 1 mA
VCE = 10 V, IC = 2 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 10 V, IE = â1 mA, f = 30 MHz
VCE = 10 V, IE = â1 mA, f = 1 MHz
Rg = 50 Ω
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit
â¯
â¯
0.1
μA
â¯
â¯
1.0
μA
40
â¯
240
â¯
â¯
0.4
V
â¯
â¯
1.0
V
80 120 ⯠MHz
â¯
2.2
3.0
pF
â¯
30
50
ps
â¯
2.0
3.5
dB
1
2007-11-01
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