2SC2715_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type (PCT process)

2SC2715
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2715
High Frequency Amplifier Applications
Unit: mm
• High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz)
• Recommended for FM IF, OSC stage and AM CONV. IF stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
35
V
Collector-emitter voltage
V_CEO
30
V
Emitter-base voltage
V_EBO
4
V
Collector current
I_C
50
mA
Base current
I_B
10
mA
Collector power dissipation
P_C
150
mW
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
USM
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
JEITA
―
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Collector-base time constant
Power gain
I_CBO
I_EBO
V_CB = 35 V, I_E = 0
V_EB = 4 V, I_C = 0
h_FE
V_CE = 12 V, I_C = 2 mA
(Note)
V_CE (sat)
V_BE
f_T
C_ob
C_c･rbb’
G_pe
I_C = 10 mA, I_B = 1 mA
I_C = 10 mA, I_B = 1 mA
V_CE = 10 V, I_C = 1 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CE = 10 V, I_E = −1 mA, f = 30 MHz
V_CC = 6 V, I_E = −1 mA, f = 10.7 MHz
(Figure 1)
Note: h_FE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
1.0
μA
40
⎯
240
⎯
⎯
0.4
V
⎯
⎯
1.0
V
100
⎯
400 MHz
⎯
2.0
3.2
pF
⎯
⎯
50
ps
27
30
33
dB
1
2007-11-01