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2SC2713_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process) | |||
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2SC2713
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2713
Audio Frequency General Purpose Amplifier Applications
⢠High voltage: VCEO = 120 V
⢠Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
⢠High hFE: hFE = 200~700
⢠Low noise: NF = 1dB (typ.), 10dB (max)
⢠Complementary to 2SA1163
⢠Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
120
V
120
V
5
V
100
mA
20
mA
150
mW
125
°C
â55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
reliability significantly even if the operating conditions (i.e. operating
TOSHIBA
2-3F1A
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
IEBO
VCB = 120 V, IE = 0
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat)
fT
IC = 10 mA, IB = 1 mA
VCE = 6 V, IC = 1 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
NF
VCE = 6 V, IC = 0.1 mA
f = 1 kHz, RG = 10 kΩ
Note: hFE classification GR (G): 200~400, BL (L): 350~700
Marking
Min Typ. Max Unit
â¯
â¯
0.1
μA
â¯
â¯
0.1
μA
200
â¯
700
â¯
â¯
0.3
V
⯠100 ⯠MHz
â¯
3.0
â¯
pF
â¯
1.0
10
dB
1
2007-11-01
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