2SC2713-GR Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications

2SC2713
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2713
Audio Frequency General Purpose Amplifier Applications
High voltage: V_CEO = 120 V
• Excellent h_FE linearity: h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA) = 0.95 (typ.)
• High h_FE: h_FE = 200~700
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SA1163
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
120
V
Collector-emitter voltage
V_CEO
120
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
100
mA
Base current
I_B
20
mA
Collector power dissipation
P_C
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-3F1A
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
Weight: 0.012 g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
I_CBO
V_CB = 120 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_FE
(Note)
V_CE = 6 V, I_C = 2 mA
V_{CE (sat)} I_C = 10 mA, I_B = 1 mA
f_T
V_CE = 6 V, I_C = 1 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
NF
V_CE = 6 V, I_C = 0.1 mA
f = 1 kHz, R_G = 10 kΩ
Note: h_FE classification GR (G): 200~400, BL (L): 350~700
Marking
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
200
⎯
700
⎯
⎯
0.3
V
⎯ 100 ⎯ MHz
⎯
3.0
⎯
pF
⎯
1.0
10
dB
1
2007-11-01