2SC2710_03 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – For Audio Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2710
2SC2710
For Audio Amplifier Applications
Unit: mm
· High DC current gain: hFE (1) = 100~320
· Complementary to 2SA1150
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
35
V
30
V
5
V
800
mA
160
mA
300
mW
150
°C
-55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 35 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V _{(BR) CEO} I_C = 10 mA, I_B = 0
h_{FE (1)}
(Note)
V_CE = 1 V, I_C = 100 mA
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CE = 1 V, I_C = 700 mA
I_C = 500 mA, I_B = 20 mA
V_CE = 1 V, I_C = 10 mA
V_CE = 5 V, I_C = 10 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O: 100~200, Y: 160~320
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
30
¾
¾
V
100
¾
320
35
¾
¾
¾
¾
0.5
V
0.5
¾
0.8
V
¾
120
¾
MHz
¾
13
¾
pF
1
2003-03-25