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2SC2710-Y Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) | |||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2710
2SC2710
For Audio Amplifier Applications
Unit: mm
⢠High DC current gain: hFE (1) = 100~320
⢠Complementary to 2SA1150
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
â55~150
°C
JEDEC
â
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
â
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.13 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
VCE = 1 V, IC = 100 mA
(Note)
hFE (2) VCE = 1 V, IC = 700 mA
VCE (sat) IC = 500 mA, IB = 20 mA
VBE
VCE = 1 V, IC = 10 mA
fT
VCE = 5 V, IC = 10 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
Min Typ. Max Unit
â¯
â¯
0.1
μA
â¯
â¯
0.1
μA
30
â¯
â¯
V
100
â¯
320
35
â¯
â¯
â¯
â¯
0.5
V
0.5
â¯
0.8
V
⯠120 ⯠MHz
â¯
13
â¯
pF
1
2007-11-01
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