2SC2532_03 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER, DRIVER STAGE FOR LED LAMP, TEMPERATURE COMPENSATION APPLICATIONS)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2532
Audio Frequency Amplifier Applications
Driver Stage for LED Lamp Applications
Temperature Compensation Applications
· High hFE: hFE (1) = 5000 (min) (IC = 10 mA)
hFE (2) = 10000 (min) (IC = 100 mA)
2SC2532
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
40
V
40
V
10
V
300
mA
60
mA
150
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
I_CBO
I_EBO
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_BE
Test Condition
V_CB = 40 V, I_E = 0
V_EB = 8 V, I_C = 0
V_CE = 5 V, I_C = 10 mA
V_CE = 2 V, I_C = 100 mA
I_C = 300 mA, I_B = 0.3 mA
V_CB = 2 V, I_C = 100 mA
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
5000 ¾
¾
10000 ¾
¾
¾
0.9 1.3
V
¾ 1.25 1.6
V
Marking
Equivalent Circuit
1
2003-03-27