2SC2482_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2482
High-Voltage Switching and Amplifier Applications
Color TV Horizontal Driver Applications
Color TV Chroma Output Applications
2SC2482
Unit: mm
• High breakdown voltage: V_CEO = 300 V
• Small collector output capacitance: C_ob = 3.0 pF (typ.)
• Recommended for chroma output and driver applications for
line-operated TV horizontal.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
300
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
V_CEO
V_EBO
I_C
I_B
300
V
7
V
100
mA
50
mA
JEDEC
TO-92MOD
Collector power dissipation
P_C
900
mW
JEITA
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09