2SC2459_03 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2459
2SC2459
Audio Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 120 V (max)
· High DC current gain: hFE = 200~700
· Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
· Low noise: NF = 1dB (typ.), 10dB (max)
· Complementary to 2SA1049.
· Small package.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
120
V
120
V
5
V
100
mA
20
mA
200
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
I_CBO
V_CB = 120 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_FE
(Note)
V_CE = 6 V, I_C = 2 mA
V_{CE (sat)}
f_T
C_ob
NF
I_C = 10 mA, I_B = 1 mA
V_CE = 6 V, I_C = 1 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CE = 6 V, I_C = 0.1 mA,
f = 1 kHz, R_G = 10 kW
Note: h_FE classification GR: 200~400, BL: 350~700
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
200
¾
700
¾
¾
0.3
V
¾
100
¾
MHz
¾
3.0
¾
pF
¾
1.0
10
dB
1
2003-03-27