2SC2458L_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process)

2SC2458(L)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2458(L)
Audio Amplifier Applications
Low Noise Audio Amplifier Applications
Unit: mm
• High current capability: I_C = 150 mA (max)
• High DC current gain: h_FE = 70~700
• Excellent h_FE linearity: h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA) = 0.95 (typ.)
• Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
• Complementary to 2SA1048 (L).
• Small package.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
50
V
50
V
5
V
150
mA
50
mA
200
mW
125
°C
−55~125
°C
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
I_CBO
V_CB = 50 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_FE
V_CE = 6 V, I_C = 2 mA
(Note)
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
f_T
V_CE = 10 V, I_C = 1 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
NF (1)
V_CE = 6 V, I_C = 0.1 mA, f = 100 Hz,
R_G = 10 kΩ
NF (2)
V_CE = 6 V, I_C = 0.1 mA, f = 1 kHz,
R_G = 10 kΩ
Note: h_FE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
70
⎯
700
⎯
0.1 0.25
V
80
⎯
⎯ MHz
⎯
2.0
3.5
pF
⎯
0.5
6
dB
⎯
0.2
3
2007-11-01