2SC2458-Y Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2458
2SC2458
Audio Amplifier Applications
Unit: mm
• High current capability: I_C = 150 mA (max)
• High DC current gain: h_FE = 70~700
• Excellent h_FE linearity: h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA) = 0.95 (typ.)
• Low noise: NF (2) = 1dB (typ.), 10dB (max)
• Complementary to 2SA1048.
• Small package.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
150
mA
Base current
I_B
50
mA
JEDEC
―
Collector power dissipation
P_C
200
mW
JEITA
―
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
I_CBO
V_CB = 50 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_FE
V_CE = 6 V, I_C = 2 mA
(Note)
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
f_T
V_CE = 10 V, I_C = 1 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
NF
V_CE = 6 V, I_C = 0.1 mA, f = 1 kHz,
R_g = 10 kΩ
Note: h_FE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
70
⎯
700
⎯
0.1 0.25
V
80
⎯
⎯ MHz
⎯
2.0
3.5
pF
⎯
1.0
10
dB
1
2007-11-01