2SC2290A Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)

2SC2290A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
z Specified 12.5V, 28MHz Characteristics
z Output Power
: Po = 60W_PEP (Min.)
z Power Gain
: Gp = 11.8dB (Min.)
z Collector Efficiency
: η_C = 35% (Min.)
z Intermodulation Distortion: IMD = −30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CES
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
45
45
18
4
20
175
175
−65~175
UNIT
V
V
V
V
A
W
°C
°C
MARKING
JEDEC
EIAJ
TOSHIBA
Weight: 5.2g
Unit in mm
—
—
2−13B1A
TOSHIBA
2SC2290
JAPAN















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Lot No.
1
2005-03-09