2SC2240_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2240
2SC2240
Low Noise Audio Amplifier Applications
Unit: mm
The 2SC2240 is a transistor for low frequency and low noise
applications. This device is designed to lower noise figure in the region of
low signal source impedance, and to lower the pulse noise. This is
recommended for the first stages of Equalizer amplifiers.
• Low noise: NF = 4dB (typ.) R_G = 100 Ω, V_CE = 6 V, I_C = 100 μA,
f = 1 kHz
: NF = 0.5dB (typ.) R_G = 1 kΩ, V_CE = 6 V, I_C = 100 μA,
f = 1 kHz
• Low pulse noise: Low 1/f noise
• High DC current gain: h_FE = 200~700
• High breakdown voltage: V_CEO = 120 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
120
V
120
V
5
V
100
mA
20
mA
300
mW
125
°C
−55~125
°C
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01