2SC2230A Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT Process)

2SC2230,2SC2230A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC2230,2SC2230A
High-Voltage General Amplifier Applications
Color TV Class-B Sound Output Applications
Unit: mm
• High breakdown voltage: V_CEO = 180 V (2SC2230A)
• High DC current gain
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
200
V
Collector-emitter
voltage
2SC2230
2SC2230A
V_CEO
160
180
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
100
mA
Base current
I_B
50
mA
Collector power dissipation
Junction temperature
Storage temperature range
P_C
800
mW
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TO-92MOD
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5J1A
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09