2SC2229_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT Process)

2SC2229
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC2229
Black and White TV Video Output Applications
High-Voltage Switching Applications
Driver Stage Audio Amplifier Applications
Unit: mm
• High breakdown voltage: V_CEO = 150 V (min)
• Low output capacitance: C_ob = 5.0 pF (max)
• High transition frequency: f_T = 120 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
200
V
Collector-emitter voltage
V_CEO
150
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
50
mA
Base current
Collector power dissipation
Junction temperature
Storage temperature range
I_B
20
mA
P_C
800
mW
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
―
2-5J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09