2SC1959_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT process)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC1959
2SC1959
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Unit: mm
• Excellent h_FE linearity : h_{FE (2)} = 25 (min): V_CE = 6 V, I_C = 400 mA
• 1 watt amplifier applications.
• Complementary to 2SA562TM.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
35
V
30
V
5
V
500
mA
100
mA
500
mW
150
°C
−55~150
°C
JEDEC
JEITA
TO-92
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5F1B
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.21 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 35 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_{FE (1)}
V_CE = 1 V, I_C = 100 mA
(Note)
h_{FE (2)}
V_CE = 6 V, I_C = 400 mA
(Note)
V_{CE (sat)}
V_BE
f_T
C_ob
I_C = 100 mA, I_B = 10 mA
V_CE = 1 V, I_C = 100 mA
V_CE = 6 V, I_C = 20 mA
V_CB = 6 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O: 70~140, Y: 120~240, GR: 200~400
h_{FE (2)} classification O: 25 (min), Y: 40 (min)
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
70
⎯
400
25
⎯
⎯
⎯
0.1 0.25
V
⎯
0.8
1.0
V
⎯ 300 ⎯ MHz
⎯
7
⎯
pF
1
2007-11-01