2SC1815YTE2FT Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
2SC1815
Unit: mm
High voltage and high current:
V_CEO = 50 V (min),
I_C = 150 mA (max)
• Excellent h_FE linearity: h_{FE (2)} = 100 (typ.)
at V_CE = 6 V, I_C = 150 mA
: h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA)
= 0.95 (typ.)
• Low noise: NF = 1dB (typ.) at f = 1 kHz
• Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
60
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
5
V
Collector current
Base current
Collector power dissipation
I_C
150
mA
I_B
50
mA
JEDEC
TO-92
P_C
400
mW
JEITA
SC-43
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
Symbol
Test Condition
I_CBO
V_CB = 60 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_{FE (1)}
V_CE = 6 V, I_C = 2 mA
(Note)
h_{FE (2)} V_CE = 6 V, I_C = 150 mA
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
V_{BE (sat)} I_C = 100 mA, I_B = 10 mA
f_T
V_CE = 10 V, I_C = 1 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CE = 10 V, I_E = −1 mA
r_bb’
f = 30 MHz
V_CE = 6 V, I_C = 0.1 mA
NF
f = 1 kHz, R_G = 10 kΩ
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
70
⎯
700
25 100 ⎯
⎯
0.1 0.25
V
⎯
⎯
1.0
V
80
⎯
⎯ MHz
⎯
2.0
3.5
pF
⎯
50
⎯
Ω
⎯
1.0
10
dB
Note: h_FE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1
2007-11-01